Abstract
Molecular dynamics simulations are carried out to study the thermal and mechanical phenomena of heat conduction induced by ultrafast laser heating of nanoscale Si films. A distribution of internal heat source obeying Beer–Lambda law is applied to model the laser energy deposition in the film and to calculate the induced temperature and stress distributions. Thermal waves are observed from the local temperature temporal variations and spatial distributions. The developments of averaged static pressure and local displacement in the film show a consistent periodicity. The time evolutions of both the local pressure and net heat flux fluctuate strongly, but show similar trends between these two local physical quantities, demonstrating a close relationship between the stress and the net heat flow.