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Interface composition and band alignment issues in high-K gate stacks
Conference proceeding

Interface composition and band alignment issues in high-K gate stacks

S Sayan, L Goncharova, D Starodub, R.A Bartynski, X Zhao, D Vanderbilt, T Gustafsson and E Garfunkel
International Semiconductor Device Research Symposium, 2003, p.26
2003
DOI: https://doi.org/10.1109/ISDRS.2003.1271978

Abstract

Chemistry Gallium arsenide High K dielectric materials High-K gate dielectrics Laboratories Photoelectricity Semiconductor films X-ray scattering Dielectric Materials Physics
In this paper, we describe the band structure and phase alignment by first principle DFT calculations to study the properties of the different crystalline structures of HfO/sub 2/ and ZrO/sub 2/. It is found that the band gap, barrier height and dielectric response of these two materials are phase dependent. Finally, as charge within the dielectric and at the interface remains a critical issue in high-K integration, we briefly discuss correlations between electrical properties, composition and band alignment.

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