Arsenic segregation to silicon/silicon oxide interfaces

Journal article

Peer reviewed

C. Y Wong, C. R. M Grovenor, P. E Batson and R. D Isaac

Journal of applied physics, Vol.58(3), pp.1259-1262

1985

Abstract

Condensed matter: structure, mechanical and thermal properties

Defects and impurities in crystals; microstructure

Exact sciences and technology

Impurities: concentration, distribution, and gradients

Structure of solids and liquids; crystallography

Physics

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Title: Arsenic segregation to silicon/silicon oxide interfaces
Creators: C. Y Wong - IBM, Thomas J. Watson res. center
C. R. M Grovenor - IBM, Thomas J. Watson res. center
P. E Batson - IBM, Thomas J. Watson res. center
R. D Isaac - IBM, Thomas J. Watson res. center
Publication Details: Journal of applied physics, Vol.58(3), pp.1259-1262
Date published: 1985
Publisher: American Institute of Physics
Academic Unit: Physics and Astronomy (SAS)
Language: English
Resource Type: Journal article
Identifiers: 991031665266704646