Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks

Journal article

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S Sayan, T Emge, E Garfunkel, Xinyuan Zhao, L Wielunski, R. A Bartynski, David Vanderbilt, J. S Suehle, S Suzer and M Banaszak-Holl

Journal of applied physics, Vol.96(12), pp.7485-7491

12/15/2004

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Title: Band alignment issues related to HfO2∕SiO2∕p-Si gate stacks
Creators: S Sayan
T Emge
E Garfunkel
Xinyuan Zhao
L Wielunski
R. A Bartynski
David Vanderbilt
J. S Suehle
S Suzer
M Banaszak-Holl
Publication Details: Journal of applied physics, Vol.96(12), pp.7485-7491
Date published: 12/15/2004
Academic Unit: Chemistry and Chemical Biology (SAS); Physics and Astronomy (SAS); Laboratory for Surface Modification; Rutgers Global
Language: English
Resource Type: Journal article
Identifiers: 991031665425404646