Bandgap, Mid-Gap States, and Gating Effects in MoS2

Journal article

Peer reviewed

Chih-Pin LU, GUOHONG LI, JINHAI MAO, Li-Min WANG and Eva Y ANDREI

Nano letters, Vol.14(8), pp.4628-4633

2014

PMID: 25004377

Abstract

Fullerenes and related materials; diamonds, graphite

Exact sciences and technology

Condensed matter: structure, mechanical and thermal properties

Thermal properties of condensed matter

Electronics

Materials science

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Physics

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Applied sciences

Thermal properties of small particles, nanocrystals, nanotubes

Specific materials

Transistors

Cross-disciplinary physics: materials science; rheology

4 Record Views

Title: Bandgap, Mid-Gap States, and Gating Effects in MoS2
Creators: Chih-Pin LU - Department of Physics, National Taiwan University, Taipei, 10617, Taiwan, Province of China
GUOHONG LI - Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855, United States
JINHAI MAO - Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855, United States
Li-Min WANG - Department of Physics, National Taiwan University, Taipei, 10617, Taiwan, Province of China
Eva Y ANDREI - Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855, United States
Publication Details: Nano letters, Vol.14(8), pp.4628-4633
Date published: 2014
Publisher: American Chemical Society
Academic Unit: Physics and Astronomy (SAS)
Language: English
Resource Type: Journal article
Identifiers: 991031653884804646