Effects of reactive ion etching on chemical vapor deposition

Journal article

Peer reviewed

C. Y Wong and P. E Batson

Applied physics letters, Vol.50(5), pp.253-255

1987

Abstract

Condensed matter: structure, mechanical and thermal properties

Exact sciences and technology

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

Thin film structure and morphology

Physics

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Title: Effects of reactive ion etching on chemical vapor deposition
Creators: C. Y Wong - IBM Thomas J. Watson res. cent, Yorktown Heights NY 10598, United States
P. E Batson - IBM Thomas J. Watson res. cent, Yorktown Heights NY 10598, United States
Publication Details: Applied physics letters, Vol.50(5), pp.253-255
Date published: 1987
Publisher: American Institute of Physics
Academic Unit: Physics and Astronomy (SAS)
Language: English
Resource Type: Journal article
Identifiers: 991031664337704646