Etch-induced damage in high-density inductively coupled plasma etching reactors

Journal article

Peer reviewed

D Misra, W Zhong, R. A Bartynski, V Patel and B Singh

Semiconductor science and technology, Vol.11(5), pp.816-821

1996

Abstract

Cross-disciplinary physics: materials science; rheology

Electronics

Exact sciences and technology

Lithography, masks and pattern transfer

Microelectronic fabrication (materials and surfaces technology)

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Surface cleaning, etching, patterning

Surface treatments

Applied Sciences

Materials Science

Physics

19 Record Views

Title: Etch-induced damage in high-density inductively coupled plasma etching reactors
Creators: D Misra - Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, United States
W Zhong - Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, United States
R. A Bartynski - Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, United States
V Patel - Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, United States
B Singh - Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, United States
Publication Details: Semiconductor science and technology, Vol.11(5), pp.816-821
Date published: 1996
Publisher: Institute of Physics
Academic Unit: Laboratory for Surface Modification
Language: English
Resource Type: Journal article
Identifiers: 991031665599904646