Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers

Journal article

Peer reviewed

S Guha, V. K Paruchuri, M Copel, V Narayanan, Y. Y Wang, P. E Batson, N. A Bojarczuk, B Linder and B Doris

Applied physics letters, Vol.90(9), p.92902

02/26/2007

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Title: Examination of flatband and threshold voltage tuning of HfO2∕TiN field effect transistors by dielectric cap layers
Creators: S Guha
V. K Paruchuri
M Copel
V Narayanan
Y. Y Wang
P. E Batson
N. A Bojarczuk
B Linder
B Doris
Publication Details: Applied physics letters, Vol.90(9), p.92902
Date published: 02/26/2007
Academic Unit: Physics and Astronomy (SAS)
Language: English
Resource Type: Journal article
Identifiers: 991031665223704646