GeOx interface layer reduction upon Al-gate deposition on a HfO2∕GeOx∕Ge(001) stack

Journal article

Peer reviewed

Applied physics letters, Vol.92(17), p.172906

04/28/2008

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Title: GeOx interface layer reduction upon Al-gate deposition on a HfO2∕GeOx∕Ge(001) stack
Creators: Sylvie Rangan
Eric Bersch
Robert Allen Bartynski
Eric Garfunkel
Elio Vescovo
Publication Details: Applied physics letters, Vol.92(17), p.172906
Date published: 04/28/2008
Academic Unit: Physics and Astronomy (SAS); Laboratory for Surface Modification; Rutgers Global
Language: English
Resource Type: Journal article
Identifiers: 991031666148704646