Graded electronic structure in a 3 nm strained Ge40Si60 quantum well

Journal article

Peer reviewed

P. E Batson and J. F Morar

Physical review letters, Vol.71(4), pp.609-612

1993

PMID: 10055319

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures

Exact sciences and technology

Physics

Surface and interface electron states

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Title: Graded electronic structure in a 3 nm strained Ge40Si60 quantum well
Creators: P. E Batson - IBM, Thomas J. Watson res. cent., Yorktown Heights NY 10598, United States
J. F Morar - IBM, Thomas J. Watson res. cent., Yorktown Heights NY 10598, United States
Publication Details: Physical review letters, Vol.71(4), pp.609-612
Date published: 1993
Publisher: American Physical Society
Academic Unit: Physics and Astronomy (SAS)
Language: English
Resource Type: Journal article
Identifiers: 991031666018704646