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12 Record Views
- Title
- Nanoscale Internal Fields in a Biased Graphene–Insulator–Semiconductor Structure
- Creators
- Sylvie RanganMalathi Kalyanikar - Department of Chemistry and Chemical Biology, Rutgers University, 610 Taylor Road, Piscataway, New Jersey 08854, United StatesJunxi DuanGang Liu - Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, United StatesRobert Allen BartynskiEva Y AndreiLeonard Feldman - Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, United StatesEric Garfunkel - Department of Chemistry and Chemical Biology, Rutgers University, 610 Taylor Road, Piscataway, New Jersey 08854, United States, Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, United States
- Publication Details
- The journal of physical chemistry letters, Vol.7(17), pp.3434-3439
- Date published
- 09/2016
- Academic Unit
- Physics and Astronomy (SAS); Laboratory for Surface Modification; Institute for Advanced Materials, Devices and Nanotechnology; Chemistry and Chemical Biology (SAS); Rutgers Global
- Language
- English
- Resource Type
- Journal article
- Identifiers
- 991031654640604646