Abstract
We have measured x-ray absorption spectra (XAS) at the oxygen
K
edge for hafnium oxide
(
HfO
2
)
films grown by chemical vapor deposition (CVD) and atomic layer deposition (ALD), as well as for hafnium silicate (HfSiO) films grown by CVD. The XAS results are compared to x-ray diffraction (XRD) and spectroscopic ellipsometry (SE) data from the same films. Features characteristic of crystalline
HfO
2
are observed in the XAS spectra from all CVD-grown
HfO
2
films, even for a thickness of 5 nm where XRD is not sensitive. XAS and XRD spectra from the ALD-grown
HfO
2
films exhibit the signature of crystallinity only for films that are 20 nm or thicker. These characteristic XAS features are absent in all HfSiO films measured, which is consistent with their being amorphous. The appearance of these peaks in XAS and XRD is correlated with sub-band-gap absorption in the SE spectra, which appears to be intrinsic to crystalline
HfO
2
in the monoclinic phase.