Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

Journal article

S Sayan, R. A Bartynski, X Zhao, E. P Gusev, D Vanderbilt, M Croft, M Banaszak Holl and E Garfunkel

physica status solidi (b), Vol.241(10), pp.2246-2252

08/2004

Abstract

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Title: Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study
Creators: S Sayan - Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
R. A Bartynski - Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
X Zhao - Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
E. P Gusev - IBM T. J. Watson Research Center, Yorktown Heights, New York, USA
D Vanderbilt - Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
M Croft - Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA
M Banaszak Holl - Department of Chemistry, University of Michigan, Ann Arbor, MI 48109, USA
E Garfunkel - Department of Chemistry, Rutgers University, Piscataway, NJ 08854, USA
Publication Details: physica status solidi (b), Vol.241(10), pp.2246-2252
Date published: 08/2004
Publisher: WILEY-VCH Verlag
Number of pages: 7
Academic Unit: Physics and Astronomy (SAS); Laboratory for Surface Modification
Language: English
Resource Type: Journal article
Identifiers: 991031664393104646